Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2008-07-22
2008-07-22
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257SE23167, C257SE23144, C257SE23145, C257SE23161, C257S751000, C257S750000, C257S774000, C257S758000, C257S763000, C257S762000, C257S761000
Reexamination Certificate
active
11380074
ABSTRACT:
A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure, the intermediate interconnect structure having an opening disposed between two surfaces of a dielectric material, wherein the first liner layer is in direct contact with at least a portion of a conductive wiring material of an underneath interconnect layer; a noble metal layer disposed on the first liner layer at least in the opening; and a conductive wiring material disposed on the noble metal layer, the conductive wiring material substantially filling the opening; wherein the first liner layer, the noble metal layer and the conductive wiring material are coplanar with the two surfaces of the dielectric material of the intermediate interconnect structure, and the noble metal layer includes a different material than the first liner layer.
REFERENCES:
patent: 6345665 (2002-02-01), Schulz-Harder
patent: 6441492 (2002-08-01), Cunningham
patent: 7187085 (2007-03-01), Clevenger et al.
patent: 2002/0153554 (2002-10-01), Kajita et al.
patent: 2005/0064701 (2005-03-01), Dalton et al.
patent: 2006/0019485 (2006-01-01), Komai et al.
patent: 2006/0073695 (2006-04-01), Filippi et al.
patent: 2007/0032062 (2007-02-01), Lee et al.
patent: 2007/0049007 (2007-03-01), Yang et al.
patent: 2007/0096319 (2007-05-01), Hsu et al.
patent: 2007/0117377 (2007-05-01), Yang et al.
patent: 2007/0158717 (2007-07-01), Edelstein et al.
patent: 2007/0161239 (2007-07-01), Murray et al.
patent: 2007/0194450 (2007-08-01), Tyberg et al.
patent: 2007/0196639 (2007-08-01), Gates et al.
patent: 2007/0205482 (2007-09-01), Yang et al.
Chen Shyng-Tsong
Ponoth Shom
Spooner Terry A.
Yang Chih-Chao
Hoffman Warnick LLC
International Business Machines Corporation Inc.
Petrokaitis Joseph
Williams Alexander O
LandOfFree
Back end of the line structures with liner and noble metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Back end of the line structures with liner and noble metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back end of the line structures with liner and noble metal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3908700