Atomic layer deposition systems and methods including...

Details Atomic layer deposition systems and methods including... Atomic layer deposition systems and methods including...

2011-05-17

2011-05-17

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21584, C438S653000, C438S656000

Reexamination Certificate

active

07943507

ABSTRACT:
The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR1)(NR2R3)3, wherein each R1, R2, and R3is independently hydrogen or an organic group, with the proviso that at least one of R1, R2, and R3is a silicon-containing organic group. Such systems and methods can be useful for depositing tantalum silicon nitride layers on substrates.

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