Semiconductor interconnect structure

Details Semiconductor interconnect structure Semiconductor interconnect structure

2006-10-10

2006-10-10

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S753000, C257S760000, C257S762000, C257S774000, C257S775000, C257SE23160, C257SE21584

Reexamination Certificate

active

07119441

ABSTRACT:
In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.

REFERENCES:
patent: 5705849 (1998-01-01), Zheng et al.
patent: 5793112 (1998-08-01), Hasegawa et al.
patent: 5939788 (1999-08-01), McTeer
patent: 6100195 (2000-08-01), Chan et al.
patent: 6124198 (2000-09-01), Mosiehi
patent: 6140238 (2000-10-01), Kitch
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6184143 (2001-02-01), Ohashi et al.
patent: 6228767 (2001-05-01), Yakura
patent: 6255233 (2001-07-01), Smith et al.
patent: 6291891 (2001-09-01), Higashi et al.
patent: 6335570 (2002-01-01), Mori et al.
patent: 6380625 (2002-04-01), Pramanick et al.
patent: 6383907 (2002-05-01), Hasegawa et al.
patent: 6420258 (2002-07-01), Chen et al.
patent: 6436817 (2002-08-01), Lee
patent: 6468906 (2002-10-01), Chan et al.
patent: 6566258 (2003-05-01), Dixit et al.
patent: 7-183300 (1995-07-01), None
patent: 7-201851 (1995-08-01), None
patent: 7-297186 (1995-11-01), None
patent: 2000-012544 (2000-01-01), None

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