Atomic layer deposition method for depositing a layer

Details Atomic layer deposition method for depositing a layer Atomic layer deposition method for depositing a layer

2006-07-10

2009-08-25

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S799000, C438S681000, C257SE21471, C257S576000, C427S255310

Reexamination Certificate

active

07579285

ABSTRACT:
The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

REFERENCES:
patent: 6395650 (2002-05-01), Callegari et al.
patent: 2002/0081826 (2002-06-01), Rotondaro et al.
patent: 2004/0266217 (2004-12-01), Kim et al.
patent: 2005/0074983 (2005-04-01), Shinriki et al.
patent: 2005/0087791 (2005-04-01), Park et al.
patent: 2005/0175789 (2005-08-01), Helms, Jr. et al.

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