Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-10-31
2006-10-31
Smith, Duane (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S092000, C117S093000
Reexamination Certificate
active
07128787
ABSTRACT:
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.
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Basceri Cem
Castovillo Paul J.
Derderian Garo J.
Sandhu Gurtej S.
Luk Emmanuel S.
Micro)n Technology, Inc.
Smith Duane
Wells St. John P.S.
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