Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-05-24
2005-05-24
Norton, Nadine G. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S093000, C117S102000, C118S715000, C427S248100, C427S255230
Reexamination Certificate
active
06896730
ABSTRACT:
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A fixed volume first precursor gas charge is provided within a gas flow path to the deposition chamber. A fixed volume purge gas charge is provided within the gas flow path serially upstream of the first precursor gas charge. The first precursor gas charge and the purge gas charge are serially flowed along the gas flow path to the substrate within the deposition chamber effective to form a monolayer on the substrate and purge at least some of the first precursor gas from the substrate. Apparatus are also disclosed.
REFERENCES:
patent: 4036170 (1977-07-01), Goodheim
patent: 4263091 (1981-04-01), King
patent: 4296920 (1981-10-01), Miller et al.
patent: 4689094 (1987-08-01), Van Rees et al.
patent: 4761269 (1988-08-01), Conger et al.
patent: 4989637 (1991-02-01), Dittrich
patent: 5046925 (1991-09-01), Fletcher
patent: 5200388 (1993-04-01), Abe et al.
patent: 5254210 (1993-10-01), Jones et al.
patent: 5316579 (1994-05-01), McMillan et al.
patent: 5463978 (1995-11-01), Larkin et al.
patent: 5517854 (1996-05-01), Plumb et al.
patent: 5620524 (1997-04-01), Fan et al.
patent: 5730801 (1998-03-01), Tepman et al.
patent: 5765585 (1998-06-01), Peterson
patent: 5873177 (1999-02-01), Honda et al.
patent: 5879461 (1999-03-01), Adams
patent: 6079867 (2000-06-01), Fiorentini et al.
patent: 6143659 (2000-11-01), Leem
patent: 6185839 (2001-02-01), Kholodenko et al.
patent: 6200387 (2001-03-01), Ni
patent: 6230501 (2001-05-01), Bailey, Sr. et al.
patent: 6240943 (2001-06-01), Smith
patent: 6245151 (2001-06-01), Bhandari et al.
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6403156 (2002-06-01), Jang et al.
patent: 6419462 (2002-07-01), Horie et al.
patent: 6420230 (2002-07-01), Derderian et al.
patent: 6426307 (2002-07-01), Lim
patent: 6458416 (2002-10-01), Derderian et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6478872 (2002-11-01), Chae et al.
patent: 6482262 (2002-11-01), Elers et al.
patent: 6520936 (2003-02-01), Mann
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6559472 (2003-05-01), Sandhu et al.
patent: 6596583 (2003-07-01), Agarwal et al.
patent: 6596636 (2003-07-01), Sandhu et al.
patent: 6613587 (2003-09-01), Carpenter et al.
patent: 6620253 (2003-09-01), Dando et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6653154 (2003-11-01), Doan et al.
patent: 6689624 (2004-02-01), Doan et al.
patent: 6730367 (2004-05-01), Sandhu
patent: 6743736 (2004-06-01), Mardian et al.
patent: 6746934 (2004-06-01), Sandhu et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6765250 (2004-07-01), Doan et al.
patent: 6787185 (2004-09-01), Derderian et al.
patent: 6787373 (2004-09-01), Dando et al.
patent: 6787463 (2004-09-01), Mardian et al.
patent: 20010024387 (2001-09-01), Raaijmakers et al.
patent: 20010041250 (2001-11-01), Werkhoven et al.
patent: 20020037630 (2002-03-01), Agarwal et al.
patent: 20020192369 (2002-12-01), Morimoto et al.
patent: 20030001190 (2003-01-01), Basceri et al.
patent: 20030003697 (2003-01-01), Agarwal et al.
patent: 20030207593 (2003-11-01), Derderian et al.
patent: 20040040502 (2004-03-01), Basceri et al.
patent: 20040040503 (2004-03-01), Basceri et al.
U.S. patent applicatioin Ser. No. 10/340,098, Mardian et al., filed Jan. 10, 2003.
Basceri Cem
Derderian Garo J.
Sandhu Gurtej S.
Sarigiannis Demetrius
Norton Nadine G.
Song Matthew
Wells St. John P.S.
LandOfFree
Atomic layer deposition apparatus and methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Atomic layer deposition apparatus and methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposition apparatus and methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3452999