Atomic layer deposited dielectric layers

Details Atomic layer deposited dielectric layers Atomic layer deposited dielectric layers

2007-03-20

2007-03-20

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21461

Reexamination Certificate

active

10379470

ABSTRACT:
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 5302461 (1994-04-01), Anthony
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5625233 (1997-04-01), Cabral et al.
patent: 5745334 (1998-04-01), Hoffarth et al.
patent: 5789030 (1998-08-01), Rolfson
patent: 5912797 (1999-06-01), Schneemeyer et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6040243 (2000-03-01), Li et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207589 (2001-03-01), Ma et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6258637 (2001-07-01), Wilk et al.
patent: 6291866 (2001-09-01), Wallace et al.
patent: 6294813 (2001-09-01), Forbes et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6300203 (2001-10-01), Buynoski et al.
patent: 6331465 (2001-12-01), Forbes et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6404027 (2002-06-01), Hong et al.
patent: 6420230 (2002-07-01), Derderian et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6441417 (2002-08-01), Zhang et al.
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6451662 (2002-09-01), Chudzik et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6455717 (2002-09-01), Vaartstra
patent: 6458701 (2002-10-01), Chae et al.
patent: 6461914 (2002-10-01), Roberts et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6498063 (2002-12-01), Ping
patent: 6514348 (2003-02-01), Miyamoto
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6518610 (2003-02-01), Yang et al.
patent: 6518634 (2003-02-01), Kaushik et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6524867 (2003-02-01), Yang et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 6527866 (2003-03-01), Matijasevic et al.
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6537613 (2003-03-01), Senzaki et al.
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6541353 (2003-04-01), Sandhu et al.
patent: 6544875 (2003-04-01), Wilk
patent: 6551893 (2003-04-01), Zheng et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6559472 (2003-05-01), Sandhu et al.
patent: 6573199 (2003-06-01), Sandhu et al.
patent: 6586792 (2003-07-01), Ahn et al.
patent: 6590252 (2003-07-01), Kutsunai et al.
patent: 6592942 (2003-07-01), Van Wijck
patent: 6596636 (2003-07-01), Sandhu et al.
patent: 6608378 (2003-08-01), Forbes et al.
patent: 6613656 (2003-09-01), Li
patent: 6613702 (2003-09-01), Sandhu et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6627503 (2003-09-01), Ma et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6638859 (2003-10-01), Sneh et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6645882 (2003-11-01), Halliyal et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6656835 (2003-12-01), Marsh et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6677250 (2004-01-01), Campbell et al.
patent: 6683005 (2004-01-01), Sandhu et al.
patent: 6683011 (2004-01-01), Smith et al.
patent: 6686212 (2004-02-01), Conley et al.
patent: 6696332 (2004-02-01), Visokay et al.
patent: 6699747 (2004-03-01), Ruff et al.
patent: 6709989 (2004-03-01), Ramdani et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6730575 (2004-05-01), Eldridge
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6762114 (2004-07-01), Chambers
patent: 6767582 (2004-07-01), Elers
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6770536 (2004-08-01), Wilk et al.
patent: 6777353 (2004-08-01), Putkonen
patent: 6778441 (2004-08-01), Forbes et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6787413 (2004-09-01), Ahn et al.
patent: 6790791 (2004-09-01), Ahn et al.
patent: 6794315 (2004-09-01), Klemperer et al.
patent: 6800567 (2004-10-01), Cho
patent: 6803311 (2004-10-01), Choi
patent: 6804136 (2004-10-01), Forbes
patent: 6808978 (2004-10-01), Kim
patent: 6812100 (2004-11-01), Ahn et al.
patent: 6821862 (2004-11-01), Cho
patent: 6821873 (2004-11-01), Visokay et al.
patent: 6831315 (2004-12-01), Raaijmakers et al.
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6844260 (2005-01-01), Sarigiannis et al.
patent: 6852167 (2005-02-01), Ahn et al.
patent: 6858444 (2005-02-01), Ahn et al.
patent: 6884739 (2005-04-01), Ahn et al.
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6930059 (2005-08-01), Conley et al.
patent: 6930346 (2005-08-01), Ahn et al.
patent: 6958302 (2005-10-01), Ahn et al.
patent: 6979855 (2005-12-01), Ahn et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0030352 (2001-10-01), Ruf et al.
patent: 2002/0001971 (2002-01-01), Cho
patent: 2002/0024080 (2002-02-01), Derderian et al.
patent: 2002/0025628 (2002-02-01), Derderian et al.
patent: 2002/0046705 (2002-04-01), Sandhu et al.
patent: 2002/0068466 (2002-06-01), Lee et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0094632 (2002-07-01), Agarwal et al.
patent: 2002/0100418 (2002-08-01), Sandhu et al.
patent: 2002/0111001 (2002-08-01), Ahn
patent: 2002/0122885 (2002-09-01), Ahn
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0164420 (2002-11-01), Derderian et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2002/0192975 (2002-12-01), Ahn
patent: 2002/0192979 (2002-12-01), Ahn
patent: 2002/0195056 (2002-12-01), Sandhu et al.
patent: 2003/0001212 (2003-01-01), Hu et al.
patent: 2003/0003702 (2003-01-01), Ahn
patent: 2003/0017717 (2003-01-01), Ahn
patent: 2003/0043637 (2003-03-01), Forbes et al.
patent: 2003/0045060 (2003-03-01), Ahn
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2003/0048666 (2003-03-01), Eldridge et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0102501 (2003-06-01), Yang et al.
patent: 2003/0104666 (2003-06-01), Bojarczuk et al.
patent: 2003/0119246 (2003-06-01), Ahn
patent: 2003/0119291 (2003-06-01), Ahn et al.
patent: 2003/0124794 (2003-07-01), Girardie
patent: 2003/0132491 (2003-07-01), Ahn
patent: 2003/0157764 (2003-08-01), Ahn et al.
patent: 2003/0170403 (2003-09-01), Doan et al.
patent: 2003/0181039 (2003-09-01), Sandhu et al.
patent: 2003/0183156 (2003-10-01), Dando et al.
patent: 2003/0193061 (2003-10-01), Osten
patent: 2003/0203626 (2003-10-01), Derderian et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0207593 (2003-11-01), Derderian et al.
patent: 2003/0224600 (2003-12-01), Cao et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2003/0235961 (2003-12-01), Metzner et al.
patent: 2004/0007171 (2004-01-01), Ritala et al.
patent: 2004/0009679 (2004-01-01), Yeo et al.
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0033661 (2004-02-01), Yeo et al.

Affiliated with

Also associated with

Rating

Atomic layer deposited dielectric layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Atomic layer deposited dielectric layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Atomic layer deposited dielectric layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3748485