Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-09-13
2005-09-13
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S298310, C427S456000
Reexamination Certificate
active
06942764
ABSTRACT:
Contamination due to deposited particulate matter has been greatly reduced in single wafer sputter-etchers by coating the full interior of the sputtering shield with a layer of an arc-sprayed material such as aluminum, said layer being possessed of a high degree of surface roughness. The method for forming the coating of arc-sprayed aluminum is described and data comparing particulate contaminant count and product yield before and after the adoption of the present invention, are presented.
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Maissel et al, in the IBM Journal of Research and Development vol 14 p 176, Mar. 1970.
Chen Chuan-Huai
Lin Cheng-Kun
Yang Chin-Shien
McDonald Rodney G.
Taiwan Semiconductor Manufacturing Company , Ltd.
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