Aqueous ammonium hydroxide amorphous silicon etch method for...

Details Aqueous ammonium hydroxide amorphous silicon etch method for... Aqueous ammonium hydroxide amorphous silicon etch method for...

2005-04-19

2005-04-19

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S396000, C438S398000

Reexamination Certificate

active

06881622

ABSTRACT:
Within a method for fabricating a capacitor structure within a microelectronic fabrication there is formed a capacitor structure comprising a pair of capacitor plate layers separated by a capacitor dielectric layer. Within the method, at least one of the pair of capacitor plates is formed of a doped amorphous silicon material formed incident to isotropic etching within an etchant solution comprising aqueous ammonium hydroxide, without hydrogen peroxide.

REFERENCES:
patent: 5846921 (1998-12-01), Gil et al.
patent: 5866453 (1999-02-01), Prall et al.
patent: 6066527 (2000-05-01), Kudelka et al.
patent: 6083849 (2000-07-01), Ping et al.
patent: 6262450 (2001-07-01), Kotecki et al.

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