Approach to prevent undercut of oxide layer below gate...

Details Approach to prevent undercut of oxide layer below gate... Approach to prevent undercut of oxide layer below gate...

2005-07-12

2005-07-12

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C438S595000, C438S652000

Reexamination Certificate

active

06916718

ABSTRACT:
A method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode is deposited over the layer of gate oxide. The gate electrode is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N2/H2, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.

REFERENCES:
patent: 5939333 (1999-08-01), Hurley et al.
patent: 6144071 (2000-11-01), Gardner et al.
patent: 6187676 (2001-02-01), Kim et al.
patent: 6200868 (2001-03-01), Mase et al.
patent: 6512266 (2003-01-01), Deshpande et al.
patent: 6593198 (2003-07-01), Segawa

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