Approach for the formation of semiconductor devices which reduce

Details Approach for the formation of semiconductor devices which reduce Approach for the formation of semiconductor devices which reduce

1998-03-17

2000-11-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438549, 438306, 257336, 257337, 257335, H01L 2122, H01L 2138, H01L 21336, H01L 2976

Patent

active

061534870

ABSTRACT:
The present invention provides a method and system for the formation of semiconductor devices which reduces band-to-band tunneling current and short-channel effects. The method and system includes implanting first low-dose arsenic into an area in the substrate, thermally diffusing the first low-dose arsenic through a portion of the substrate, implanting a second higher-dose arsenic into the area in the substrate, and diffusing the second higher-dose arsenic into the area in the substrate. Under the present invention, the combination of the first and second arsenic implants has a graded lateral profile which reduces band-to-band tunneling current and short-channel effects. The method also improves the reliability and performance of the semiconductor devices.

REFERENCES:
patent: 5371394 (1994-12-01), Ma et al.
patent: 5719424 (1998-02-01), Ahmad et al.
patent: 5897348 (1999-04-01), Wu

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