Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-05
2000-04-11
Breneman, Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 67, 216 68, 427569, H01L 2100, C23F 100
Patent
active
060487984
ABSTRACT:
A plasma processing chamber includes a substrate holder and a gas distribution plate having an inner surface facing the substrate holder, the inner surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The inner surface is cooled by adding a heat transfer gas such as helium to process gas supplied through the gas distribution plate. The chamber can include a dielectric window between an antenna and the gas distribution plate. The control of the temperature of the inner surface facing the substrate minimizes process drift and degradation of the quality of the processed substrates during sequential processing of the substrates such as during oxide etching of semiconductor wafers.
REFERENCES:
patent: 4340462 (1982-07-01), Koch
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4842683 (1989-06-01), Chen et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5198718 (1993-03-01), Davis et al.
patent: 5200232 (1993-04-01), Tappan et al.
patent: 5241245 (1993-08-01), Barnes
patent: 5262029 (1993-11-01), Erskine et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5304279 (1994-04-01), Coultas et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5405480 (1995-04-01), Benzing et al.
patent: 5464476 (1995-11-01), Gibb et al.
patent: 5478429 (1995-12-01), Komino et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5531834 (1996-07-01), Ishizuka et al.
patent: 5567267 (1996-10-01), Kazama et al.
patent: 5580385 (1996-12-01), Paranjpe et al.
patent: 5587038 (1996-12-01), Ceechi et al.
patent: 5770098 (1998-06-01), Araki et al.
patent: 5874361 (1999-02-01), Collins et al.
patent: 5880037 (1999-03-01), Arleo
Chebi Robert
Doe Adrian
Flanner Janet M.
Gadgil Prashant
Jordon John P.
Alejandro Luz
Breneman Bruce
Lam Research Corporation
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