Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-02-10
1997-03-11
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 70, 156345, 1566431, 118723R, H01L 21302
Patent
active
056097743
ABSTRACT:
A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
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"The Relationship Between Surface Potential and Etching Characteristics With ECR Plasma"; Fujiwara et al.; 1988 Dry Process Symposium; pp. 9-14.
Arai Yasuyuki
Ishida Noriya
Itoh Kenji
Kadono Masaya
Takayama Toru
Breneman R. Bruce
Ferguson Jr. Gerald J.
Goudreau George
Semiconductor Energy Laboratory Co., Inc.
Smith Evan R.
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