Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-09-06
2005-09-06
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C315S111210, C333S017300
Reexamination Certificate
active
06939813
ABSTRACT:
A plasma reactor comprises an electromagnetic energy source coupled to a radiator through first and second variable impedance networks. The plasma reactor includes a chamber having a dielectric window that is proximate to the radiator. A shield is positioned between the radiator and the dielectric window. The shield substantially covers a surface of the radiator near the dielectric window. A portion of the radiator that is not covered by the shield is proximate to a conductive wall of the chamber. Plasma reactor operation includes the following steps. A plasma is ignited in a chamber with substantially capacitive electric energy coupled from the radiator. A variable impedance network is tuned so that the capacitive electric energy coupled into the chamber is diminished. The plasma is then powered with substantially magnetic energy.
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Lieberman, M.A. ,et al. ,Principles of Plasma Discharges and Materials Processing, New York: John Wiley & Sons, Inc.,389, 406.
Blalock Guy T.
Donohoe Kevin G.
Luk Olivia
Niebling John F.
Schwegman Lundberg Woessner & Kluth P.A.
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