Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2005-11-14
2009-08-25
Hendricks, Keith D (Department: 1794)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S710000
Reexamination Certificate
active
07578944
ABSTRACT:
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
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Bae Do-In
Choi Dae-Kyu
Hwang Wan-Goo
Kim Jin-Man
Min Young-Min
George Patricia A
Harness & Dickey & Pierce P.L.C.
Hendricks Keith D
Samsung Electronics Co,. Ltd.
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