Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-05-23
1996-08-13
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117108, H01L 2120, C30B 2308
Patent
active
055446183
ABSTRACT:
An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.
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Gurary Alexander
Nelson Craig R.
Stall Richard A.
Tompa Gary S.
Breneman R. Bruce
Fleck Linda J.
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