Apparatus for depositing a coating on a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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117108, H01L 2120, C30B 2308

Patent

active

055446183

ABSTRACT:
An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.

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patent: 4740263 (1988-04-01), Imai et al.
patent: 4911102 (1990-03-01), Manabe et al.
patent: 5288327 (1994-02-01), Bhat
patent: 5288365 (1994-02-01), Furukawa et al.

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