Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-03-01
2005-03-01
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S775000
Reexamination Certificate
active
06861666
ABSTRACT:
Disclosed is test structure that can be fabricated with minimal photolithography masking steps and in which defects may be localized to specific layers. Mechanisms for fabricating such test structures are also provided. In one embodiment, a semiconductor test structure suitable for a voltage contrast inspection is provided. The test structure includes one or more test layers corresponding to one or more product layers selected from a plurality of product layers of an integrated circuit (IC) product structure. The number of the selected one or more test layers is less than a total number of the plurality of product layers of the product structure, and the test layers include at least a first portion that is designed to have a first potential during the voltage contrast inspection and a second portion that is designed to have a second potential during the voltage contrast inspection. The first potential differs from the second potential. The selected one or more test layers which correspond to product layers are selected from the plurality of product layers such that defects found in the test layers of the test structure during the voltage contrast inspection represent a prediction of defects in the corresponding product structure.
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De Indranil
Nunan Peter D.
Verma Gaurav
Weiner Kurt H.
Beyer Weaver & Thomas LLP.
Jackson Jerome
KLA-Tencor Technologies Corporation
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