Apparatus and method of forming a device layer

Details Apparatus and method of forming a device layer Apparatus and method of forming a device layer

2005-11-15

2005-11-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S294000, C438S427000, C257S446000, C257S506000

Reexamination Certificate

active

06964894

ABSTRACT:
A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device layer wafer by 1) providing a material layer, 2) coupling a conductor to the material layer, and 3) forming at least two conductive paths through at least a portion of the material layer to the conductor. The method then provides the noted handle wafer, and couples the device layer wafer to the handle wafer. The wafers are coupled so that the conductor is contained between the material layer and the handle wafer.

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