Apparatus and method for use in manufacturing a...

Details Apparatus and method for use in manufacturing a... Apparatus and method for use in manufacturing a...

2006-04-25

2006-04-25

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S758000, C438S785000

Reexamination Certificate

active

07033937

ABSTRACT:
An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

REFERENCES:
patent: 5389197 (1995-02-01), Ishimaru
patent: 6187693 (2001-02-01), Koyanagi
patent: 6261973 (2001-07-01), Misium et al.

Affiliated with

Also associated with

Rating

Apparatus and method for use in manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for use in manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for use in manufacturing a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3599947