Apparatus and method for sputtering ionized material in a plasma

Details Apparatus and method for sputtering ionized material in a plasma Apparatus and method for sputtering ionized material in a plasma

1998-07-30

2000-10-17

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429806, 20429811, 20419212, 20419215, 20419222, 20429812, 118723I, 118723IR, 118723AN, 156345, 438731, 438676, 438680, 427569, C23C 1434

Patent

active

06132566&

ABSTRACT:
An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the formation of a continuous metal film over the inner surface of the shield during sputtering and deposition. The sidewalls defining the channels permit RF transmission after the surfaces directly facing the plasma are coated with metal.

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