Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-10-24
2006-10-24
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
Reexamination Certificate
active
07126225
ABSTRACT:
A multi-layered semiconductor structure with free areas limiting the placement of test keys. First and second scribe lines intersect to define one corner point of a die. The first and second scribe lines are part of the multilayered structure and at least one layer of the multi-layer structure is a low-k dielectric layer. Free area A1is defined on the first scribe line and is defined by the equation A1=D1×S1, where D1is the distance from the corner point of the die toward the main area of the die, and S1is the width of the first scribe line. Free area ASis defined at the intersection of the first scribe line and the second scribe line adjacent the die and is defined by the equation AS=S1×S2, where S2is the width of the second scribe line.
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Hou Shang Y.
Hu Chenming
Huang Chender
Jeng Shin Puu
Lee Hsin-Hui
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Toledo Fernando L.
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