Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-17
2009-11-10
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S672000, C257SE21575, C257SE21577, C257SE21585
Reexamination Certificate
active
07615486
ABSTRACT:
A method and system for depositing films on a substrate for copper interconnect in an integrated system are provided to enable controlled-ambient transitions within an integrated system to limit exposure of the substrate to uncontrolled ambient conditions. The method includes moving the substrate into a processing chamber having a plurality of proximity heads. Within the processing chamber, barrier layer deposition is performed over a surface of the substrate using one of the plurality of proximity heads functioning to perform barrier layer ALD. In addition, the method includes moving the substrate from the processing chamber, through a transfer module of the integrated systems, into a processing module for performing copper seed layer deposition. Within the processing module for performing copper seed layer deposition, copper seed layer deposition is performed over the surface of the substrate. The processing chamber for performing the barrier layer ALD and the processing module for performing the copper seed layer deposition are parts of the integrated system.
REFERENCES:
patent: 2005/0106865 (2005-05-01), Chung et al.
patent: 2005/0158473 (2005-07-01), Raykin et al.
patent: 2006/0033678 (2006-02-01), Lubomirsky et al.
patent: 2007/0020890 (2007-01-01), Thakur et al.
Boyd John M.
Dordi Yezdi
Korolik Mikhail
Redeker Fritz C.
Yoon Hyungsuk Alexander
Lam Research Corporation
Lee Cheung
Martine Penilla & Gencarella, LLP.
Mulpuri Savitri
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