Apparatus and method for in-situ endpoint detection for...

Details Apparatus and method for in-situ endpoint detection for... Apparatus and method for in-situ endpoint detection for...

2005-04-05

2005-04-05

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

C356S630000, C451S006000

Reexamination Certificate

active

06876454

ABSTRACT:
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.

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