Anti-reflective coating and process using an anti-reflective...

Details Anti-reflective coating and process using an anti-reflective... Anti-reflective coating and process using an anti-reflective...

2005-08-02

2005-08-02

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S745000, C438S757000

Reexamination Certificate

active

06924196

ABSTRACT:
An anti-reflective coating for use in the fabrication of a semiconductor device includes a thin oxide layer and an overlying layer of silicon oxynitride. The anti-reflective layer is advantageously used in the fabrication of FLASH memory devices which include a layer of polycrystalline silicon and an underlying layer of silicon nitride. After being used to pattern the polycrystalline silicon and silicon nitride, the anti-reflective coating is removed in a solution of hot phosphoric acid with the removal taking place before the silicon oxynitride is exposed to any elevated temperatures.

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Wolf et al., Silicon Processing for the VLSI Era, 1986, vol. 1, p. 539-542.
Wolf et al; Silicon Processing for the VLSI Era; vol. 1; 1986; p. 5 429-455, 518.

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