Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
1998-04-02
2001-04-24
Hamilton, Cynthia (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S311000
Reexamination Certificate
active
06221558
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to anti-reflection films for lithographic application, especially for polysilicon containing substrate.
2. Description of the Prior Art
Microcircuit fabrication requires that precisely controlled quantities of impurities be introduced into tiny regions of the silicon substrate. Subsequently, these regions must be interconnected to create components and VLSI circuits. The patterns that define such regions are created by a photolithographic process. As semiconductor devices become more highly integrated, the line width of VLSI circuits typically becomes scaled down. The semiconductor industry's drive toward integrated circuits with ever decreasing geometries, coupled with its pervasive use of highly reflective materials, such as polysilicon, aluminum, and metal suicides, has led to increased photolithographic patterning problems. Unexpected reflections from these underlying materials, during the photoresist-patterning step, result in the photoresist pattern being distorted.
This problem is further compounded when the photolithographic process is in the ultraviolet (UV) or deep ultraviolet (DUV) wavelength range. The patterns formed in the photoresist are easily compromised by the effects of uncontrolled reflections from the underlying materials due to the increased optical metallic nature of the underlying reflective materials at these wavelengths. Therefore, the fabrication of advanced integrated circuits with submicron geometries is limited.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide anti-reflection films for lithographic application on polysilicon containing substrate.
In one embodiment of the present invention, a structure for improving lithography patterning in an integrated circuit comprises a polysilicon layer, an optional diaphanous layer located above the polysilicon layer, an anti-reflection layer located above the diaphanous layer, and then a photoresist layer located above the diaphanous layer for patterning integrated circuit pattern. The anti-reflection layer is preferably oxynitride.
The method for forming a structure for improving lithography patterning in an integrated circuit comprises the steps of: providing a polysilicon layer, optionally forming a diaphanous layer over the polysilicon layer, forming an anti-reflection layer over the diaphanous layer, forming a photoresist layer on the anti-reflection layer, and then exposing a portion of the photoresist layer to electromagnetic radiation having a wavelength of less than 440 nanometers.
REFERENCES:
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5639687 (1997-06-01), Roman et al.
patent: 5674356 (1997-10-01), Nagayama
patent: 5677111 (1997-10-01), Ogawa et al.
Jeng Erik S.
Lin Hua-Tai
Lin John Chin-Hsiang
Tuan Hsiao-Chin
Yao Liang-Gi
Christensen O'Connor Johnson & Kindness PLLC
Hamilton Cynthia
Vanguard International Semiconductor Corporation
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