Annealed wafer manufacturing method and annealed wafer

Details Annealed wafer manufacturing method and annealed wafer Annealed wafer manufacturing method and annealed wafer

2005-01-11

2005-01-11

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S455000

Reexamination Certificate

active

06841450

ABSTRACT:
The present invention provides an annealed wafer manufacturing method using a heat treatment method causing no change in resistivity of a wafer surface even when a silicon wafer having boron deposited on a surface thereof from an environment is subjected to heat treatment in an insert gas atmosphere and enabling the heat treatment in an ordinary diffusion furnace not requiring a sealed structure for increasing airtightness nor any specific facility such as explosion-proof facility. The present invention also provides an annealed wafer in which a boron concentration in the vicinity of a surface thereof is constant and crystal defects are annihilated. In the annealed wafer manufacturing method, a silicon wafer having a natural oxide film formed on a surface thereof with boron deposited thereon from an environment is subjected to heat treatment in an atmosphere containing hydrogen gas to remove the deposited boron before the natural oxide film is removed, and then is subjected to heat treatment in an inert gas atmosphere.

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International Patent Search dated Dec. 18, 2001.

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