Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-14
2008-10-14
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S381000, C438S396000, C438S697000, C438S785000, C257SE21008, C257SE21207, C257SE21209, C257SE21682
Reexamination Certificate
active
07435654
ABSTRACT:
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower electrode and the upper electrode. The at least three high-k dielectric layers include a bottom dielectric layer contacting the lower electrode, a top dielectric layer contacting the upper electrode, and a middle dielectric layer interposed between the bottom dielectric layer and the top dielectric layer. Further, each of the bottom dielectric layer and the top dielectric layer is a high-k dielectric layer, the absolute value of the quadratic coefficient of VCC thereof being relatively low compared to that of the middle dielectric layer, and the middle dielectric layer is a high-k dielectric layer having a low leakage current compared to those of the bottom dielectric layer and the top dielectric layer. Therefore, with use of the at least three high-k dielectric layers, the VCC characteristics and the leakage current characteristics of the analog capacitor can be optimized.
REFERENCES:
patent: 5614018 (1997-03-01), Azuma et al.
patent: 5688724 (1997-11-01), Yoon et al.
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6159819 (2000-12-01), Tsai et al.
patent: 6320244 (2001-11-01), Alers et al.
patent: 6341056 (2002-01-01), Allman et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6495878 (2002-12-01), Hayashi et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6803641 (2004-10-01), Rao et al.
patent: 6849925 (2005-02-01), Halliyal et al.
patent: 6885056 (2005-04-01), Dornisch et al.
patent: 6911402 (2005-06-01), Lee et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2004/0104420 (2004-06-01), Coolbaugh et al.
patent: 2004/0113235 (2004-06-01), Coolbaugh et al.
patent: 2000-031387 (2000-01-01), None
patent: 10-2000-0007802 (2000-02-01), None
patent: 10-2000-0041370 (2000-07-01), None
patent: 10-2001-0021015 (2001-03-01), None
patent: 2003-0040530 (2003-05-01), None
patent: WO 02/31875 (2002-04-01), None
Jeong Yong-Kuk
Kim Weon-Hong
Kwon Dae-Jin
Won Seok-Jun
Lebentritt Michael S
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Analog capacitor having at least three high-k dielectric... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Analog capacitor having at least three high-k dielectric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analog capacitor having at least three high-k dielectric... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3991044