Ammonium hydroxide treatments for semiconductor substrates

Details Ammonium hydroxide treatments for semiconductor substrates Ammonium hydroxide treatments for semiconductor substrates

2007-06-19

2007-06-19

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C510S175000

Reexamination Certificate

active

10958126

ABSTRACT:
Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH4OH), water (H2O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H2O2) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH4OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.

REFERENCES:
patent: 6448622 (2002-09-01), Franke et al.
patent: 6713326 (2004-03-01), Cheng et al.
patent: 2002/0102852 (2002-08-01), Verhaverbeke et al.
patent: 2004/0159335 (2004-08-01), Montierth et al.

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