Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-11-24
2000-04-04
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419215, C23C 1434
Patent
active
060456663
ABSTRACT:
A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
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Ngan Kenny King-Tai
Satitpunwaycha Peter
Xu Zheng
Yao Gongda
Applied Materials Inc.
Cantelmo Gregg
Guenzer Charles S.
Nguyen Nam
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