ALD of metal silicate films

Details ALD of metal silicate films ALD of metal silicate films

2011-07-05

2011-07-05

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S786000, C427S255393, C427S255700, C257SE21625, C257SE21639

Reexamination Certificate

active

07972977

ABSTRACT:
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.

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