Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-06-27
2006-06-27
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21006, C427S249190
Reexamination Certificate
active
07067439
ABSTRACT:
Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
REFERENCES:
patent: 5290609 (1994-03-01), Horiike et al.
patent: 5916365 (1999-06-01), Sherman
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6238734 (2001-05-01), Senzaki et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6291283 (2001-09-01), Wilk
patent: 6297539 (2001-10-01), Ma et al.
patent: 6299294 (2001-10-01), Regan
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6348386 (2002-02-01), Gilmer
patent: 6372598 (2002-04-01), Kang et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6391803 (2002-05-01), Kim et al.
patent: 6395650 (2002-05-01), Callegari et al.
patent: 6395690 (2002-05-01), Tsaur
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6416577 (2002-07-01), Suntoloa et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6452229 (2002-09-01), Krivokapic
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6482262 (2002-11-01), Elers et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6620723 (2003-09-01), Byun et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0021589 (2001-09-01), Wilk
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0029092 (2001-10-01), Park et al.
patent: 2001/0029891 (2001-10-01), Oh et al.
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0005556 (2002-01-01), Cartier et al.
patent: 2002/0008297 (2002-01-01), Park et al.
patent: 2002/0014647 (2002-02-01), Seidl et al.
patent: 2002/0015790 (2002-02-01), Baum et al.
patent: 2002/0029092 (2002-03-01), Gass
patent: 2002/0043666 (2002-04-01), Parsons et al.
patent: 2002/0064970 (2002-05-01), Chooi et al.
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0081826 (2002-06-01), Rotondaro et al.
patent: 2002/0081844 (2002-06-01), Jeon et al.
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2002/0093046 (2002-07-01), Moriya et al.
patent: 2002/0093781 (2002-07-01), Bachhofer et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0106536 (2002-08-01), Lee
patent: 2002/0146895 (2002-10-01), Ramdani et al.
patent: 2002/0151152 (2002-10-01), Shimamoto et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2002/0187256 (2002-12-01), Elers et al.
patent: 2002/0195643 (2002-12-01), Harada
patent: 2002/0197881 (2002-12-01), Ramdani et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0072975 (2003-04-01), Shero et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0082301 (2003-05-01), Chen et al.
patent: 2003/0089942 (2003-05-01), Bhattachyrra
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2003/0104710 (2003-06-01), Visokay, et al.
patent: 2003/0106490 (2003-06-01), Jallepally et al.
patent: 2003/0109114 (2003-06-01), Niwa
patent: 2003/0116804 (2003-06-01), Visokay et al.
patent: 2003/0133861 (2003-07-01), Bowen et al.
patent: 2003/0160277 (2003-08-01), Bhattacharyya
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0173586 (2003-09-01), Moriwaki et al.
patent: 2003/0185980 (2003-10-01), Endo
patent: 2003/0186495 (2003-10-01), Saanila et al.
patent: 2003/0188682 (2003-10-01), Tois et al.
patent: 2003/0190423 (2003-10-01), Yang et al.
patent: 2003/0194853 (2003-10-01), Jeon
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0232501 (2003-12-01), Kher et al.
patent: 2003/0232506 (2003-12-01), Metzner et al.
patent: 2003/0232511 (2003-12-01), Metzner et al.
patent: 2003/0234417 (2003-12-01), Raaijmakers et al.
patent: 2003/0235961 (2003-12-01), Metzner et al.
patent: 2004/0007747 (2004-01-01), Visokay et al.
patent: 2004/0009370 (2004-01-01), Koh et al.
patent: 2004/0009675 (2004-01-01), Eissa et al.
patent: 2004/0016973 (2004-01-01), Rotondaro et al.
patent: 2004/0018723 (2004-01-01), Byun et al.
patent: 2004/0018747 (2004-01-01), Lee et al.
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0023462 (2004-02-01), Rotondaro et al.
patent: 2004/0028952 (2004-02-01), Cartier et al.
patent: 2004/0029321 (2004-02-01), Ang et al.
patent: 2004/0033698 (2004-02-01), Lee et al.
patent: 2004/0036111 (2004-02-01), Nishikawa et al.
patent: 2004/0038554 (2004-02-01), Ahn et al.
patent: 2004/0040501 (2004-03-01), Vaartstra
patent: 2004/0043149 (2004-03-01), Gordon et al.
patent: 2004/0043569 (2004-03-01), Ahn et al.
patent: 2004/0043630 (2004-03-01), Vaarstra et al.
patent: 2004/0046197 (2004-03-01), Basceri et al.
patent: 2004/0048491 (2004-03-01), Jung et al.
patent: 2004/0051152 (2004-03-01), Nakajima
patent: 2004/0053484 (2004-03-01), Kumar et al.
patent: 2004/0216670 (2004-11-01), Gutsche et al.
patent: 2005/0212119 (2005-09-01), Shero et al.
patent: 1 126 046 (2001-08-01), None
patent: 1 146 141 (2001-10-01), None
patent: 1170804 (2002-01-01), None
patent: 1 321 973 (2003-06-01), None
patent: 2355727 (2001-05-01), None
patent: 59174535 (1984-10-01), None
patent: 2001-172767 (2001-06-01), None
patent: 2002-69641 (2002-03-01), None
patent: 2002-69641 (2002-03-01), None
patent: 2002-172767 (2002-06-01), None
patent: 2001-111000 (2002-12-01), None
patent: 99/29924 (1999-06-01), None
patent: WO 00/13235 (2000-03-01), None
patent: 00/54320 (2000-09-01), None
patent: 00 70674 (2000-11-01), None
patent: 01/15220 (2001-03-01), None
patent: 01 25502 (2001-04-01), None
patent: 01/27346 (2001-04-01), None
patent: 01/27347 (2001-04-01), None
patent: 01/29280 (2001-04-01), None
patent: 01/29891 (2001-04-01), None
patent: 01/29893 (2001-04-01), None
patent: WO 01/29891 (2001-04-01), None
patent: 01 40541 (2001-06-01), None
patent: 01/66832 (2001-09-01), None
patent: 01 82390 (2001-11-01), None
patent: WO 01/99166 (2001-12-01), None
patent: 02 09167 (2002-01-01), None
patent: WO 02/01628 (2002-01-01), None
patent: 02 27063 (2002-04-01), None
patent: 02 43115 (2002-05-01), None
patent: 02/45167 (2002-06-01), None
U.S. Appl. No. 60/326,830 filed on Oct. 2, 2001.
Niinisto, et al. “Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advance applications,”Materials Science and Engineering B41 (1996) 23-29.
Hendrix, et al., “Composition Control of Hf1-xSixOFilms Deposited on Si by Chemical-vapor Deposition Using Amide Precursors,” Applied Physics Letters, vol. 80, No. 13 (Apr. 1, 2002).
Cheon, et al. “Gas Phase Photoproduction of Diatomic Metal Nitrides During Metal Nitride Laser Chemical Vapor Deposition,” Inorg. Chem. 1999, 38, 2238-2239.
Ohshita, et al. “HfO2Growth by Low-pressure Chemical Vapor Deposition Using the Hf(N(C2H5)2)4/O2Gas System,” Journal of Crystal Gr
Athreya Shankarram A.
Gopal Vidyut
Han Shixue
Kher Shreyas S.
Metzner Craig R.
Applied Materials Inc.
Kebede Brook
Patterson & Sheridan LLP
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