Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2009-04-28
2011-11-29
Nguyen, Thinh T (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S046000, C438S022000, C438S042000, C257S103000, C257SE21090
Reexamination Certificate
active
08067300
ABSTRACT:
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.
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Hirota Ryu
Motoki Kensaku
Nakahata Seiji
Okahisa Takuji
Uematsu Kouji
McDermott Will & Emery LLP
Nguyen Thinh T
Sumitomo Electric Industries Ltd.
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