4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Processes of growth with a subsequent step of heat treating...

Ryu Hirota

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A1 x In y Ga 1-x-y N mixture crystal substrate, method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
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Al x In y Ga 1−x−y N mixture crystal substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Al x In y Ga 1-x-y N mixture crystal substrate, method of...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Fabrication method and fabrication apparatus of group III...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Group III nitride crystal substrate, method of its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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