Advanced CMOS using super steep retrograde wells

Details Advanced CMOS using super steep retrograde wells Advanced CMOS using super steep retrograde wells

2007-10-30

2010-02-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21618

Reexamination Certificate

active

07655523

ABSTRACT:
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

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