Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-29
2009-02-24
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S689000, C257SE21347
Reexamination Certificate
active
07494857
ABSTRACT:
A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode on the gate dielectric; forming a source/drain region adjacent the gate dielectric and the gate electrode; forming an absorption-capping layer over the source/drain region and the gate electrode; performing an activation by applying a high-energy light to the absorption-capping layer; and removing the absorption-capping layer.
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Chang Hsun
Chen Chien-Hao
Chen Shih-Chang
Ku Keh-Chiang
Lee Tze-Liang
Ahmadi Mohsen
Lindsay, Jr. Walter L
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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