Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-06-20
1999-04-06
Russel, Jeffrey E.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
118723E, 156345, H05H 100
Patent
active
058913505
ABSTRACT:
A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.
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Blume Richard
Carducci James David
Lee Evans Yip
Luscher Paul Ernest
Pu Bryan
Applied Materials Inc.
Russel Jeffrey E.
Stern Robert J.
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