Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1996-07-19
2000-09-12
Gulakowski, Randy
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
216108, 216109, 438756, H01L 21302
Patent
active
061173509
ABSTRACT:
Solutions useful for etching semiconductor devices comprise ammonium fluoride, hydrofluoric acid, hydrogen peroxide, and water. Processes for forming the solutions comprise mixing first solutions which comprise ammonium fluoride, hydrofluoric acid, and water with second solutions which comprise hydrogen peroxide and water to form the solutions of the invention. Methods for etching semiconductor devices comprise contacting the devices which comprise a substrate and oxide layer thereon with the solutions of the invention to etch the devices. The oxide layer, for example a damaged silicon oxide layer on a silicon substrate, is selectively etched to the substrate.
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Ko Yong-sun
Kwon Young-min
Park Myung-jun
Yoon Byoung-moon
Alanko Anita
Gulakowski Randy
Samsung Electronics Co,. Ltd.
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