Adhesion of tungsten nitride films to a silicon surface

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S758000, C257S764000, C257S770000, C257SE23118, C257SE21292

Reexamination Certificate

active

07550851

ABSTRACT:
A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si-NH2is formed on the silicon surface, serving as an adhesion layer. A WNxlayer is formed over the Si-NH2layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNxlayer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.

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