Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2009-08-25
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C438S268000
Reexamination Certificate
active
07579648
ABSTRACT:
A semiconductor device may include a tubular channel pattern vertically extending from a semiconductor substrate. A gate insulation layer may be provided on faces exposed through the channel pattern. A gate electrode may be provided on the gate insulation layer. The gate electrode may fill the channel pattern. A conductive region, which may serve as lower source/drain regions, may be formed at a surface portion of the semiconductor substrate. The conductive region may contact a lower portion of the channel pattern. A conductive pattern, which may serve as upper source/drain regions, may horizontally extend from an upper portion of the channel pattern.
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Lee Choong-Ho
Lee Chul
Park Dong-Gun
Yoon Jae-Man
Harness & Dickey & Pierce P.L.C.
Patton Paul E
Samsung Electronics Co,. Ltd.
Smith Zandra
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