Adhesion of tungsten nitride films to a silicon surface

Details Adhesion of tungsten nitride films to a silicon surface Adhesion of tungsten nitride films to a silicon surface

2007-01-09

2007-01-09

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S762000, C438S765000, C438S791000, C257SE23118, C257SE21292

Reexamination Certificate

active

11146884

ABSTRACT:
A process is described that forms a low resistivity connection between a tungsten layer and a silicon surface with high adherence of the tungsten to the silicon. The silicon surface is plasma-cleaned to remove native oxide. A very thin layer (one or more monolayers) of Si—NH2is formed on the silicon surface, serving as an adhesion layer. A WNxlayer is formed over the Si—NH2layer, using an atomic layer deposition (ALD) process, to serve as a barrier layer. A thick tungsten layer is formed over the WNxlayer by CVD. An additional metal layer (e.g., aluminum) may be formed over the tungsten layer.

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Ghandhi, Sorab, “VLSI Fabrication Principles”, 1983, John Wiley & Sons, Inc., pp. 517-520.

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