Additional buffer layer for eliminating ozone/tetraethylorthosil

Details Additional buffer layer for eliminating ozone/tetraethylorthosil Additional buffer layer for eliminating ozone/tetraethylorthosil

1998-06-09

2000-12-05

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438245, 438244, 438242, 438239, 438243, 438240, 438254, 438253, H01L 218242

Patent

active

061565970

ABSTRACT:
A method of fabricating a semiconductor device is provided including the steps of:

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Y.K. Jun, S.K. Rha, S.C. Kim, J.S. Roh, W.S. Kim & H.G. Lee, The Fabrication and Electrical Properties of Modulated Stacked Capacitor for Advanced DRAM Application, IEEE Elec. Dev. Letters, vol. 13, No. 8, Aug., 1992, pp. 430-432.

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