Active photosensitive structure with buried depletion layer

Details Active photosensitive structure with buried depletion layer Active photosensitive structure with buried depletion layer

2007-01-05

2009-10-06

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S048000, C438S081000, C257SE21394

Reexamination Certificate

active

07598132

ABSTRACT:
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

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