Achievement of top rounding in shallow trench etch

Details Achievement of top rounding in shallow trench etch Achievement of top rounding in shallow trench etch

1998-01-12

1999-11-30

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

706719, H01L 213065

Patent

active

059942290

ABSTRACT:
A process for forming a shallow trench having steep sidewalls near its bottom and sloping sidewalls at the top is described. The process is in 3 stages. The first stage involves methane trifluoride, carbon tetrafluoride, argon, and oxygen. The second stage involves methane trifluoride and methane monofluoride, while the third stage involves hydrogen bromide, chlorine, and helium/oxygen. If the ratio of the various components at each stage is carefully controlled along with other variables such as discharge power, pressure, and duration, the trench profile described above is obtained with a minimum of deposited polymer material on the sidewalls.

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