Abrupt “delta-like” doping in Si and SiGe...

Details Abrupt “delta-like” doping in Si and SiGe... Abrupt “delta-like” doping in Si and SiGe...

2011-03-15

2011-03-15

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S489000, C438S532000, C117S936000

Reexamination Certificate

active

07906413

ABSTRACT:
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019atoms/cc, and a second epitaxial layer having a change in concentration in its first 40from the first layer of greater than 1×1019P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

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