4. Single-crystal, oriented-crystal, and epitaxy growth processes;
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ZnO/sapphire substrate and method for manufacturing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Zone-melting recrystallization of semiconductor materials

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent

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Zone-melting recrystallization process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent

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