Zone-melting recrystallization of semiconductor materials

Details Zone-melting recrystallization of semiconductor materials Zone-melting recrystallization of semiconductor materials

1994-03-15

1996-07-30

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117202, 117204, C30B 3500

Patent

active

055401830

ABSTRACT:
An apparatus for zone-melting recrystallization of semiconductor films on semiconductor substrates includes a heater disposed opposite the front surface of a semiconductor substrate and moving across the semiconductor substrate at a uniform rate. The heater may be a strip heating element covered with an insulating and refractory material radiating less heat than the strip heating element. Since heat emitted from surfaces of the heating element except the surface opposite the substrate is intercepted by the insulating and refractory film, the width of the molten zone produced in the semiconductor film is reduced.

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Geis et al, "Zone-Melting Recrystallization Of Encapsulated Silicon Films On SiO.sub.2 Morphology And Crystallography", Applied Physics Letters, vol. 40, No. 2, 1982, pp. 158-160.
Stultz et al, "Arc Lamp Zone Melting and Recrystallization Of Si Films On Oxidized Silicon Substrates", Applied Physics Letters, vol. 41, No. 9, 1982, pp. 824-826.

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