4. Semiconductor device manufacturing: process
  5. Forming bipolar transistor by formation or alteration of...
  6. Forming base region of specified dopant concentration profile
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High performance SiGe HBT with arsenic atomic layer doping

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Reexamination Certificate

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High speed and low parasitic capacitance semiconductor...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Reexamination Certificate

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High speed bipolar transistor using a patterned etch stop and di

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Patent

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