High performance SiGe HBT with arsenic atomic layer doping

Details High performance SiGe HBT with arsenic atomic layer doping High performance SiGe HBT with arsenic atomic layer doping

2006-03-27

2009-02-03

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

C438S505000, C438S766000, C257SE29044

Reexamination Certificate

active

07485538

ABSTRACT:
A base structure for high performance Silicon Germanium (SiGe) based heterojunction bipolar transistors (HBTs) with arsenic atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas or hydrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe spacer layer. The surface of the final silicon cap layer is preferably etched to remove most of the arsenic. The resulting SiGe HBT with an arsenic ALD layer is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

REFERENCES:
patent: 7067855 (2006-06-01), Cardone et al.
patent: 2005/0040445 (2005-02-01), Mouli

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