High speed bipolar transistor using a patterned etch stop and di

Details High speed bipolar transistor using a patterned etch stop and di High speed bipolar transistor using a patterned etch stop and di

1995-01-09

1997-04-01

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

438365, 438366, H01L 21265

Patent

active

056165080

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A base electrode (114) is formed over at least one end portion of the base-link diffusion source layer (118) and the exposed portions of the base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).

REFERENCES:
patent: 4843034 (1989-06-01), Herndon et al.
patent: 5331199 (1994-07-01), Chu et al.
patent: 5488002 (1996-01-01), Kimura et al.
Kiyotaka Imai, Yasushi Kinoshita, Toru Yamazaki, Toru Tatsumi and Tsutomu Tashiro; "A Low Donor Concentration Retrograde Profile Si Bipolar Transistor For Low-Temperature BiCMOS LSI's"; 1994 Symposium on VLSI Technology Digest of Technical Papers; pp. 159-160.
V. dela Torre, J. Foerstner, B. Lojek, K. Sakamoto, S. L. Sundaram, N. Tracht, B. Vasquez and P. Zdebel; "MOSAIC V--Very High Performance BiPolar Technology"; IEEE 1991 BiPolar Circuits and Technology Meeting 1.3.
M. Sugiyama, H. Takemura, C. Ogawa, T. Tashiro, T. Morikawa and M. Nakamae; "A 40 GHz f.sub.T Si BiPolar Transistor LSI Technology"; 1989 IEEE, IEDM 89, pp. 221-224.
H. Takamura, S. Ohi, M. Sugiyama, T. Tashiro and M. Nakamae; "BSA Technology for Sub-100 nm Deep Base BiPolar Transistors"; 1987 IEEE, IEDM 87, pp. 375-378.

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