Nitride trench fill process for increasing shallow trench isolat

Details Nitride trench fill process for increasing shallow trench isolat Nitride trench fill process for increasing shallow trench isolat

1999-01-20

2000-04-25

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438359, 257622, 257510, 257506, H01L 2160

Patent

active

060543434

ABSTRACT:
A semiconductor device and method having shallow trench isolation. A pad oxide 24 and silicon 42 are formed on a substrate 20 to form a mask, and the pad oxide 24/silicon 42 mask is then patterned. Portions of the pad oxide 24/silicon 42 mask and the substrate 20 are removed to form trenches 22 in the substrate 20. A nitride fill 40 is deposited over the pad oxide 24/silicon 42 mask and the trenches 22. Advantages of the invention include a more robust STI device without central voids 34 and without edge voids 36 in the trench fill material.

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patent: 5868870 (1999-02-01), Fazan et al.
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